 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IRF450 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) N-CHANNEL POWER MOSFET 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 VDSS ID(cont) RDS(on) FEATURES 500V 13A W 0.4W 20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.070) 1.52 (0.060) 7.87 (0.310) 6.99 (0.275) * HERMETICALLY SEALED TO-3 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO-3 Metal Package Pin 1 - Gate Pin 2 - Source Case - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD EAS IAR dv/dt TJ , Tstg TL Gate - Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25C) Continuous Drain Current (VGS = 0 , Tcase = 100C) Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 2 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63") from case for 10 sec. 20V 12A 7.75A 48A 150W 1.2W/C 8.0mJ 12A 3.5V/ns -55 to +150C 300C Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 25V , L 480mH , RG = 25W , Peak IL = 28A , Starting TJ = 25C 3) @ ISD 28A , di/dt 170A/ms , VDD BVDSS , TJ 150C , Suggested RG = 9.1W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 12.07 (0.475) 11.30 (0.445) Prelim. 10/99 IRF450 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain - Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain - Source On-State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25C ID = 1mA VGS = 10V ID = 7.75A VGS = 10V ID = 12A VDS = VGS ID = 250mA VDS 15V IDS = 7.75A VGS = 0 VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 12A VDS = 0.5BVDSS VDD = 250V ID = 12A RG = 2.35W Min. 500 Typ. Max. Unit V 0.78 0.4 0.5 4 25 250 100 -100 2700 600 240 55 5 27 120 19 70 35 190 170 130 12 48 1.7 1600 14 Negligible 5.0 13 1.0 0.12 30 V / C W V S (E) 2 5.5 mA nA pF nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 12A TJ = 25C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 12A TJ = 25C Reverse Recovery Charge 1 di / dt 100A/ms VDD 50V Forward Turn-On Time PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTICS Thermal Resistance Junction - Case Thermal Resistance Case - Sink Thermal Resistance Junction - Ambient A V ns mC nH RqJC RqCS RqJA C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 10/99 |
Price & Availability of IRF450
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |